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  january 2010 doc id 16487 rev 2 1/9 9 t12t snubberless?, logic level and standard 12 a triacs features medium current triac high static and dynamic commutation low thermal resistance with clip bonding packages is rohs (2002/95/ec) compliant 600 v v rm applications value sensitive application general purpose ac line load switching motor control circuits in power tools small home appliances, lighting inrush current limiting circuits overvoltage crowbar protection description available in through-hole, the t12t series of triacs can be used as on/off or phase angle control function in general purpose ac switching where high commutation capability is required. this series can be designed-in in many value sensitive appliances thanks to the parameters guidance provided in the following pages. provides insulation rated at 2500 v rms (to-220ab insulated package). tm : snubberless is a trademark of stmicroelectronics table 1. device summary order code symbol value t1220t-6i T1235T-6I i gt 3q snubberless 20 / 35 ma t1225t-6i i gt 4q standard 25 ma t1210t-6i i gt 3q logic level 10 ma a2 g a1 g a2 a1 to-220ab insulated (t12xxt-6i) www.st.com
characteristics t12t 2/9 doc id 16487 rev 2 1 characteristics table 2. absolute maximum ratings (limiting values; t j = 25 c, unless otherwise specified) symbol parameter value unit i t(rms) on-state rms current (full sine wave) t c = 88 c 12 a i tsm non repetitive surge peak on-state current (full cycle, t j initial = 25 c) f = 50 hz t p = 20 ms 90 a f = 60 hz t p = 16.7 ms 95 i 2 ti 2 t value for fusing t p = 10 ms 54 a 2 s di/dt critical rate of rise of on-state current i g = 2 x i gt t r 100 ns f = 60 hz t j = 125 c 50 a/s v dsm / v rsm non repetitive surge peak off-state voltage t p = 10 ms t j = 25 c v drm /v rrm + 100 v i gm peak gate current t p = 20 s t j = 125 c 4 a p g(av) average gate power dissipation t j = 125 c 1 w t stg storage junction temperature range - 40 to + 150 c t j operating junction temperature range - 40 to + 125 c
t12t characteristics doc id 16487 rev 2 3/9 table 3. electrical characteristics (t j = 25 c, unless otherwise specified) symbol test conditions quadrant t12xxt unit t1210t t1220t t1225t t1235t i gt (1) v d = 12 v r l = 30 i - ii - iii max. 10 20 25 35 ma iv 40 v gt v d = v drm , r l = 3.3 k , t j = 25 c all max. 1.3 v v gd v d = v drm , r l = 3.3 k , t j = 125 c all min. 0.2 v i h (2) i t = 500 ma max. 10 15 20 30 ma i l i g = 1.2 i gt i - iii max. 20 35 40 50 ma iv 40 ii 30 40 60 80 dv/dt (2) v d = 67% v drm, gate open t j = 125 c min. 100 1000 100 2000 v/s t j = 150 c (3) 50 500 50 1000 (di/dt)c (2) (dv/dt)c = 0.1 v/s t j = 125 c min. 77 a/ms (dv/dt)c = 10 v/s 3 3 without snubber 6 12 (dv/dt)c = 0.1 v/s t j = 150 c (3) 33 (dv/dt)c = 10 v/s 1 1 without snubber 3 10 1. minimum i gt is guaranted at 5% of i gt max. 2. for both polarities of a2 referenced to a1. 3. derating information for excess temperature above t j max. table 4. static characteristics symbol test conditions value unit v t (1) i tm = 17 a, t p = 380 s t j = 25 c max. 1.55 v v to (1) threshold voltage t j = 125 c max. 0.85 v r d (1) dynamic resistance t j = 125 c max. 35 m i drm i rrm v drm = v rrm t j = 25 c max. 5a t j = 125 c 1 ma v d = 0.9 x v drm t j = 150 c (2) typ. 1.9 1. for both polarities of a2 referenced to a1. 2. derating information for excess temperature above t j max.
characteristics t12t 4/9 doc id 16487 rev 2 table 5. thermal resistance symbol parameter value unit r th(j-c) junction to case (ac) 2.6 c/w r th(j-a) junction to ambient (dc) 60 c/w figure 1. maximum power dissipation versus rms on-state current (full cycle) figure 2. on-state rms current versus case temperature (full cycle) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0123456789101112 p(w ) 180 i t(rms) (a) =180 0 1 2 3 4 5 6 7 8 9 10 11 12 13 0 25 50 75 100 125 i t(rms) (a) =180 t c (c) figure 3. on-state rms current versus ambient temperature figure 4. relative variation of thermal impedance versus pulse duration 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 i t(rms) (a) =180 t a (c) 1.0e -02 1.0e -01 1.0e+00 1.0e -03 1.0e -02 1.0e -01 1.0e+00 1.0e+01 1.0e+02 1.0e+03 k=[z th /r th ] z th(j-c) z th(j-a) t p (s) figure 5. on state characteristics (maximum values) figure 6. surge peak on state current versus number of cycles 1 10 100 012345 i tm (a) t j =25 c t j =125 c t j max : v to = 0.85 v r d = 35 m v tm (v) 0 10 20 30 40 50 60 70 80 90 100 1 10 100 1000 i tsm (a) repetitive t c =88 c one cycle t=20ms number of cycles j non repetitive t initial=25c
t12t characteristics doc id 16487 rev 2 5/9 figure 7. non repetitive surge peak on state current for a sinusoidal figure 8. relative variation of gate trigger current and gate trigger voltage versus junction temperature 10 100 1000 0.01 0.10 1.00 10.00 i tsm (a), i2t (a2s) t j initial=25c di/dt limitation: 50 a/s i tsm i2t t p (ms) pulse with width t < 10 ms and corresponding value of i t p 2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 - 50 -25 0 25 50 75 100 125 i gt ,v gt [t j ]/i gt ,v gt [t j =25 c] v gt q1-q2-q3 gt iq3 i gt q1-q2 t j (c) typical values figure 9. relative variation of holding current and latching current versus junction temperature figure 10. relative variation of critical rate of decrease of main current versus (dv/dt)c 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 i h ,i l [t j ]/i h ,i l [t j =25 c] 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 i h ,i l [t j ]/i h ,i l [t j =25 c] i l i h t j (c) t j (c) typical values 0 1 2 3 4 5 6 7 25 50 75 100 125 dv/dt [t j ]/dv/dt[t j =125 c] v d =v r =402 v t j (c) typical values logic level and snubberless types figure 11. relative variation of critical rate of decrease of main current versus junction temperature figure 12. leakage current versus junction temperature for different values of blocking voltage (typical values) 0 1 2 3 4 5 6 7 8 25 50 75 100 125 t j (c) (di/dt) c [t j ]/(di/dt) c [t j =125 c] 1.0e-03 1.0e-02 1.0e-01 1.0e+00 25 50 75 100 125 t j (c) i drm /i rrm [tj;v drm/ v rrm ]/i drm /i rrm [tj=125c;7 00v] v drm =v rrm =400 v v drm =v rrm =600 v v drm =v rrm =600 v v drm =200 v rrm =v
ordering information scheme t12t 6/9 doc id 16487 rev 2 2 ordering information scheme figure 13. ordering information scheme t 12 10 t - 6 i triac current sensitivity application specific voltage package i = to-220ab-ins. 12 = 12 a 10 = 10 ma 20 = 20 ma 25 = 25 ma 35 = 35 ma 6 = 600 v
t12t package mechanical data doc id 16487 rev 2 7/9 3 package mechanical data epoxy meets ul94, v0 lead-free packages in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. table 6. to-220ab insulated dimensions ref. dimensions millimeters inches min. typ. max. min. typ. max. a 15.20 15.90 0.598 0.625 a1 3.75 0.147 a2 13.00 14.00 0.511 0.551 b 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 c 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 f 6.20 6.60 0.244 0.259 ?i 3.75 3.85 0.147 0.151 i4 15.80 16.40 16.80 0.622 0.646 0.661 l 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 m2.60 0.102 c b2 c2 f ? i l a a1 a2 b e b1 i4 l3 l2 c1 m
ordering information t12t 8/9 doc id 16487 rev 2 4 ordering information 5 revision history table 7. ordering information order code marking package weight base qty delivery mode t1210t-6i t1210t-6i to-220ab-ins. 2.3 g 50 tube t1220t-6i t1220t-6i t1225t-6i t1225t-6i T1235T-6I T1235T-6I table 8. document revision history date revision changes 03-dec-2009 1 initial release. 18-jan-2010 2 updated pag.1.
t12t doc id 16487 rev 2 9/9 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2010 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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